NXP Semiconductors MPC5777M - Page 70

MPC5777M Microcontroller Data Sheet, Rev. 6
Electrical characteristics
NXP Semiconductors70
12
The LXRXOP[0] bit in the LFAST LVDS Control Register (LCR) must be set to one to ensure proper LFAST receive
timing.
13
Total internal capacitance including receiver and termination, co-bonded GPIO pads, and package contributions.
Table 31. LFAST transmitter electrical characteristics
1,2
Symbol Parameter Conditions
Value
Unit
Min Typ Max
f
DATA
SR Data rate — — — 312/320
3
Mbps
V
OS
CC Common mode voltage — 1.08 — 1.32 V
|
VOD
| CC Differential output voltage swing
(terminated)
4,5
— 110 171 285 mV
t
TR
CC Rise/Fall time (absolute value of the
differential output voltage swing)
4,5
—0.26—1.5ns
C
L
SR External lumped differential load
capacitance
3
V
DD_HV_IO
= 4.5 V — — 10.0 pF
V
DD_HV_IO
= 3.0 V — — 8.5
I
LVDS_TX
CC Transmitter DC current consumption Enabled — — 3.2 mA
1
The LFAST and High-Speed Debug LFAST pad electrical characteristics are based on worst case internal capacitance
values shown in Figure 19.
2
All LFAST and High-Speed Debug LVDS pad electrical characteristics are valid from –40 °C to 150 °C.
3
The 312 Mbps data rate is achieved with a 26 MHz reference clock, and 320 Mbps is achieved with a 10 or 20 MHz
reference clock.
4
Valid for maximum data rate f
DATA
. Value given is the capacitance on each terminal of the differential pair, as shown in
Figure 19.
5
Valid for maximum external load C
L
.
Table 32. MSC/DSPI LVDS transmitter electrical characteristics
1,2
Symbol Parameter Conditions
Value
Unit
Min Typ Max
Data Rate
f
DATA
SR Data rate — — — 80 Mbps
V
OS
CC Common mode voltage — 1.08 — 1.32 V
|
VOD
| CC Differential output voltage swing
(terminated)
3,4
— 150 214 400 mV
t
TR
CC Rise/Fall time (absolute value of the
differential output voltage swing)
3,4
— 0.8 — 4.0 ns
C
L
SR External lumped differential load
capacitance
3
V
DD_HV_IO
= 4.5 V — — 50 pF
V
DD_HV_IO
= 3.0 V — — 39
I
LVDS_TX
CC Transmitter DC current consumption Enabled — — 4.0 mA
1
The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case
internal capacitance values given in Figure 19.
2
All MSC and DSPI LVDS pad electrical characteristics are valid from –40 °C to 150 °C.