MPC5777M Microcontroller Data Sheet, Rev. 6
Document revision history
NXP Semiconductors140
2 4/2013
Electrical characteristics—I/O pad specification (con’t)
Table 14 (WEAK configuration output buffer electrical characteristics)
•R
OH_W
(PMOS output impedance weak configuration) condition is now 4.5 V <
V
DD_HV_IO
< 5.9 V, Push pull I
OH
< 0.5 mA (was 4.0 V < V
DD_HV_IO
< 5.9 V). Removed
3.0 V < V
DD_HV_IO
< 4.0 V condition.
•R
OL_W
(NMOS output impedance WEAK configuration) condition is now 4.5 V <
V
DD_HV_IO
< 5.9 V, Push pull I
OL
< 0.5 mA (was 4.0 V < V
DD_HV_IO
< 5.9 V). Removed
3.0 V < V
DD_HV_IO
< 4.0 V condition.
•t
TR_W
(Transition time output pin WEAK configuration) conditions changed for C
L
= 25
pF, C
L
= 50 pF, C
L
= 200 pF: 4.5 V < V
DD_HV_IO
< 5.9 V (was 4.0 V < VDD_HV_IO <
5.9 V)
• Specification change: t
TR_W
,
C
L
= 200 pF, 4.5 V < V
DD_HV_IO
< 5.9 V max value is
820 ns (was 1000)
• Specification change: t
TR_W
,
C
L
= 25 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 50 ns
(was TBD)
• Specification change: t
TR_W
,
C
L
= 50 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 100 ns
(was TBD)
• Specification change: t
TR_W
,
C
L
= 200 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is
350 ns (was TBD) and max value is 1050 ns (was TBD)
• Conditions column heading, added footnote: All VDD_HV_IO conditions for 4.5V to
5.9V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V are valid
for VSIO[VSIO_xx] = 0
Table 15 (MEDIUM configuration output buffer electrical characteristics)
•R
OH_M
(PMOS output impedance MEDIUM configuration) condition is now 4.5 V <
V
DD_HV_IO
< 5.9 V, Push pull I
OH
< 2 mA (was 4.0 V < V
DD_HV_IO
< 5.9 V). Removed
3.0 V < V
DD_HV_IO
< 4.0 V condition.
•R
OL_M
(NMOS output impedance MEDIUM configuration) condition is now 4.5 V <
V
DD_HV_IO
< 5.9 V, Push pull I
OL
< 2mA (was 4.0V < V
DD_HV_IO
< 5.9 V). Removed
3.0 V < V
DD_HV_IO
< 4.0 V condition.
•t
TR_M
(Transition time output pin MEDIUM configuration) conditions changed for C
L
=
25 pF, C
L
= 50 pF, C
L
= 200 pF: 4.5 V < V
DD_HV_IO
< 5.9 V (was 4.0 V < VDD_HV_IO
< 5.9 V)
• Specification change: t
TR_M
,
C
L
= 200 pF, 4.5 V < V
DD_HV_IO
< 5.9 V max value is
200 ns (was 240)
• Specification change: t
TR_M
,
C
L
= 25 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 12 ns
(was TBD)
• Specification change: t
TR_M
,
C
L
= 50 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 24 ns
(was TBD)
• Specification change: t
TR_M
,
C
L
= 200 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 70 ns
(was TBD) and max value is 300 ns (was TBD)
• New specification: I
DCMAX_M
(Maximum DC current)
• New specification: t
SKEW_M
(Difference between rise and fall time)
• Formula given for transition time typical value changed to: t
TR_M
(ns) = 5.6 ns+C
L
(pF)
x 1.11 ns/pF (when 0 pF < C
L
< 50 pF) and t
TR_M
(ns) = 13 ns+C
L
(pF) x 0.96 ns/pF
(when 50 pF < C
L
< 200 pF)
• Footnote added: R
OX_M
(min) may decrease by 10% at T
J
= 165 °C.
• Footnote added: R
OX_M
(max) may increase by 10% at T
J
= 165 °C.
• Conditions column heading, added footnote: All VDD_HV_IO conditions for 4.5V to
5.9V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V are valid
for VSIO[VSIO_xx] = 0
Table 76. Revision history (continued)
Revision Date Description of changes
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