NXP Semiconductors MPC5777M - Page 141

Document revision history
MPC5777M Microcontroller Data Sheet, Rev. 6
NXP Semiconductors 141
2 4/2013
Electrical characteristics—I/O pad specification (con’t)
Table 16 (STRONG configuration output buffer electrical characteristics)
• New specification: I
DCMAX_S
(Maximum DC current)
• Renamed: R
OH_F
(PMOS output impedance STRONG configuration) is now R
OH_S
• Renamed: R
OL_F
(NMOS output impedance STRONG configuration) is now R
OL_S
• Renamed: f
MAX_M
(Output frequency STRONG configuration) is now f
MAX_S
•R
OH_S
condition is now 4.5 V < V
DD_HV_IO
< 5.9 V, Push pull I
OH
< 8 mA (was 4.0 V <
V
DD_HV_IO
< 5.9 V). Removed 3.0 V < V
DD_HV_IO
< 4.0 V condition.
•R
OL_S
condition is now 4.5 V < V
DD_HV_IO
< 5.9 V, Push pull I
OH
< 8mA (was 4.0V <
V
DD_HV_IO
< 5.9 V). Removed 3.0 V < V
DD_HV_IO
< 4.0 V condition.
•t
TR_S
conditions changed for C
L
= 25 pF, C
L
= 50 pF, C
L
= 200 pF: 4.5 V < V
DD_HV_IO
< 5.9 V (was 4.0 V < VDD_HV_IO < 5.9 V)
• Specification change: f
MAX_S
, C
L
= 200 pF max value is 5 MHz (was “—”)
• Specification change: t
TR_S
, C
L
= 25 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 4 ns
(was TBD) and max value is 15 ns (was TBD)
• Specification change: t
TR_S
, C
L
= 50 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 6 ns
(was TBD) and max value is 27 ns (was TBD)
• Specification change: t
TR_S
, C
L
= 200 pF, 3.0 V < V
DD_HV_IO
< 3.6 V min value is 20 ns
(was TBD) and max value is 83 ns (was TBD)
• Footnote added: R
OX_S
(min) may decrease by 10% at T
J
= 165 °C.
• Footnote added: R
OX_S
(max) may increase by 10% at T
J
= 165 °C.
• Conditions column heading, added footnote: All VDD_HV_IO conditions for 4.5V to
5.9V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V are valid
for VSIO[VSIO_xx] = 0
Table 17 (VERY STRONG configuration output buffer electrical characteristics)
• New specification: I
DCMAX_M
(Maximum DC current)
• New condition added to t
TR_V:
V
DD_HV_IO
=5.0V ± 10%, C
L
= 200 pF
• Footnote added: R
OX_V
(min) may decrease by 10% at T
J
= 165 °C.
• Footnote added: R
OX_V
(max) may increase by 10% at T
J
= 165 °C.
• Conditions column heading, added footnote: All VDD_HV_IO conditions for 4.5V to
5.9V are valid for VSIO[VSIO_xx] = 1, and all specifications for 3.0V to 3.6V are valid
for VSIO[VSIO_xx] = 0
Table 18 (EBI pad output electrical specification)
• Replaced this table “EBI output driver electrical characteristics” with new table “EBI pad
electrical specification”
Electrical characteristics—I/O pad current specification
New section
Electrical characteristics—Reset pad (PORST, ESR0) electrical characteristics
Section 3.8, Reset pad (PORST, ESR0) electrical characteristics:
• Added note on PORST and active control
Figure 11 (Noise filtering on reset signal):
• Replaced; significant detail added
• Clarification: V
ESR0
is also described by V
PORST
behavior shown in illustration.
• Figure prefaced with more detailed PORST
description.
Table 76. Revision history (continued)
Revision Date Description of changes