13.10 Certificates and approvals
Explosion protection in accordance with ATEX
BVS 18 ATEX E049X
● Intrinsic safety "i"
Designation II 1/2 G Ex ia/ib IIC T4/T6 Ga/Gb
Permissible ambient temperature -40 … +80 °C (-40 … +176 °F) Temperature class T4
-40 … +55 °C (-40 … +158 °F) Temperature class T6
Permissible temperature of medium -40 … +100 °C (-40 … +212 °F) temperature class T4
-40 … +70 °C (-40 … +158 °F) temperature class T6
Connection To a certified intrinsically safe circuit with the max. values:
U
i
= 30 V, I
i
= 101 mA, P
i
= 760 mW
U
i
= 29 V, I
i
= 110 mA, P
i
= 800 mW
Effective inner capacitance C
i
= 3.29 nF
Effective inner inductance Li = 0.24 µH
● Flameproof enclosure encapsulation "d"
Designation II 1/2G Ex ia/db IIC T4/T6 Ga/Gb
Permissible ambient temperature -40 … +80 °C (-40 … +176 °F) temperature class T4
-40 … +70 °C (-40 … +158 °F) temperature class T6
Permissible temperature of medium -40 … +100 °C (-40 … +212 °F) temperature class T4
-40 … +70 °C (-40 … +158 °F) temperature class T6
Connection To a circuit with the operating values:
U
H
= 10.5 … 45 V DC, 4 ... 20 mA
● Dust explosion protection for zones 21, 22
Designation II 2D Ex tb IIIC T120 °C Db
II 3D Ex tc IIIC T120 °C Dc
Permissible ambient temperature -40 ... +80 °C (-40 ... +176 °F)
Permissible temperature of medium -40 … +100 °C (-40 … +212 °F)
Max. surface temperature 120°C (248°F)
Connection To a circuit with the operating values:
U
H
= 10.5 … 45 V DC, 4 ... 20 mA
● Dust explosion protection for Zone 20, 21, 22
Designation II 1D Ex ia IIIC T120 °C Da
II 2D Ex ib IIIC T120 °C Db
II 3D Ex ic IIIC T120 °C Dc
Permissible ambient temperature -40 ... +80 °C (-40 ... +176 °F)
Permissible temperature of medium -40 … +100 °C (-40 … +212 °F)
Connection To a certified intrinsically safe circuit with the max. values:
U
i
= 30 V, I
i
= 101 mA, P
i
= 760 mW
U
i
= 29 V, I
i
= 110 mA, P
i
= 800 mW
Effective inner capacitance C
i
= 3.29 nF
Effective inner inductance Li = 0.24 µH
Technical data
13.10 Certificates and approvals
SITRANS P320/P420 with 4 to 20 mA/HART
Operating Instructions, 11/2019, A5E44852162-AC 239