In this section:
Introduction .............................................................................. 7-1
Equipment required .................................................................. 7-1
Device connections .................................................................. 7-2
Set up the measurements in Clarius ........................................ 7-4
Introduction
Capacitance-voltage (C-V) measurements are commonly used to study gate-oxide quality in detail.
These measurements are made on two-terminal devices called MOS capacitors, which are MOSFETs
without a source and drain. C-V test results offer device and process information, including bulk and
interface charges. Many MOS device parameters, such as oxide thickness, flat band voltage, and
threshold voltage, can also be extracted from the C-V test data.
This section provides an example of how to use the 4210-CVU C-V Analyzer to make a C-V sweep
on a MOS capacitor and derive common parameter extractions from the C-V data using the
Formulator.
Equipment required
One 4200A-SCS with the following instruments and accessories:
• One 421x-CVU
• Four CA-447A SMA cables
• Four CS-1247 SMA female to BNC male adapters
• Two CS-701 BNC tee adapters
Make C-V measurements on a MOSCAP
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