Section 7: Make C-V measurements on a MOSCAP 4200A-SCS Parameter Analyzer User's Manual
7-8 4200A-900-01 Rev. D/April 2020
5. Adjust the Sweep Delay as needed.
6. Select Formulator. In this test, the Formulator contains equations for deriving common MOS
capacitor parameters from the C-V data. Examples of these parameters include the oxide
capacitance, oxide thickness, flatband voltage, flatband capacitance, threshold voltage, and
doping concentration. You can view, edit, and add equations in this dialog box.
Figure 92: Formulator dialog box
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