Zeiss Crossbeam 340 - Electron Beam Deposition or Etching (with GIS Upgrade Only)

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6.7. Electron beam deposition or etching (with GIS upgrade only)
Requires a gas injection system (GIS).
Depositing and etching with the electron beam is a suitable method for materials that cannot be
pro-cessed with the focused ion beam, e.g. quartz masks.
Another advantage is, that there is no impairment of surfaces (i.e. no generation of amorphous
layers).
Precursor/gas Application
Insulator, SiO
2
Deposition
Platinum, Pt Deposition
Water
(reactive products)
Etching of material that contains carbon e.g. diamond like carbon layers (DLC)
Fluorine, XeF
2
Etching of Si-containing materials
Tungsten, W Deposition
Carbon, C Deposition
Iodine, I Etching of Al