Phytec phyFLEX-i.MX 6 - NAND Flash Memory; I2 C EEPROM Configuration

System Memory
 PHYTEC Messtechnik GmbH 2013 L-773e_2
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6.2 NAND Flash Memory (U13)
Use of Flash as non-volatile memory on the phyFLEX-i.MX 6
provides an easily reprogrammable means of code storage. The
following Flash devices can be used on the phyFLEX-i.MX 6:
The Flash devices are programmable with 3.3 V. No dedicated
programming voltage is required.
As of the printing of this manual these NAND Flash devices generally
have a life expectancy of at least 100,000 erase/program cycles and a
data retention rate of 10 years.
The NAND Flash memories are connected to the External Interface
Module (EIM). /CS0 (NANDF_CS0) of the EIM interface selects the
NAND Flash at U13.
6.3 I²C EEPROM (U10)
The phyFLEX-i.MX 6 is populated with a non-volatile 4 kB I
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EEPROM with an I²C interface at U10. This memory can be used to
store configuration data or other general purpose data. This device is
accessed through I²C port 1 on the i.MX 6. The control registers for
I²C port 1 are mapped between addresses 0x021A 0000 and 0x021A
3FFF. Please see the i.MX 6 Reference Manual for detailed
information on the registers.
The three lower address bits are fixed to zero which means that the
EEPROM can be accessed at I
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C address 0x50.
Write protection to the device is accomplished via jumper J3. Refer to
section 6.3.1 for further details.
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: See the manufacturer’s data sheet for interfacing and operation.
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