SICK nanoScan3 I/O

nanoScan3 Core I/O nanoScan3 Pro I/O
Power consumption
No output load Typ. 3.9 W
With maximum output load Typ. 15.9 W
Total output current ≤ 500 mA
Power-up delay ≤ 12 s
Safety outputs (OSSD)
Type of output 2 PNP semiconductors for
e
ach OSSD pair, short-circuit
protected, cross-circuit moni‐
tored
2 PNP semiconductors for
each OSSD pair, short-circuit
protected, cross-circuit moni‐
tored
Output voltage for ON state
(H
IGH)
(U
V
– 2 V) … U
V
(U
V
– 2 V) … U
V
Output voltage for OFF state
(LOW)
0 V … 2 V
Output current for ON state
(HIGH)
0.5 mA … 250 mA per OSSD
3)
Leakage current ≤ 250 µA
Load inductance ≤ 2.2 H
Load capacity ≤ 1 µF in series with 50 Ω
Switching sequence (no tog‐
g
ling and no simultaneous
monitoring)
Depending on the load inductance
Permissible resistivity
between load and device
≤ 4 Ω
Test pulse width ≤ 300 µs (typ. 230 µs)
Test pulse interval Typ. 8 × scan cycle time
Duration of OFF state ≥ 80 ms
Discrepancy time (offset
be
tween switching from
OSSD2 and OSSD1 within an
OSSD pair)
≤ 1 ms
Universal output, universal I/O (configured as output)
Output voltage HIGH (U
V
– 2 V
) … U
V
Output voltage LOW 0 V … 2 V
Output current HIGH 0.5 mA … 200 mA
3)
Leakage current ≤ 250 µA
Switch-on delay 30 ms
Switch-off delay 30 ms
Static control input, universal input, universal I/O (configured as input)
Input voltage HIGH 24 V (11 V … 30 V)
Input voltage LOW 0 V (-30 V … 5 V)
Input current HIGH 2 mA … 6 mA
Input current LOW 0 mA … 2 mA
Input capacity Typ. 10 nF
Input frequency (max.
s
witching sequence when
used as control input)
≤ 20 Hz
TECHNICAL DATA 13
8024596/15VP/2019-11-15 | SICK O P E R A T I N G I N S T R U C T I O N S | nanoScan3 I/O
113
Subject to change without notice