Siemens SITRANS P DS III - Page 217

Technical data
13.8 Certificates and approvals
SITRANS P DS III with PROFIBUS PA
Operating Instructions, 06/2013, A5E00053276-07
217
Certificates and approvals
HART
PROFIBUS PA and FOUNDATION
Fieldbus
Connection To a certified intrinsically safe circuit
with the max. values:
U
i
= 30 V, I
i
= 100 mA,
P
i
= 750 mW, R
i
= 300 Ω
FISCO supply unit
U
0
= 17.5 V, I
0
= 380 mA, P
0
= 5.32 W
Linear barrier
U
0
= 24 V, I
0
= 174 mA, P
0
= 1 W
Effective inner capacitance
C
i
= 6 nF
C
i
= 1.1 nF
Effective inner inductance
L
i
= 0.4 mH
L
i
= 7 µH
• Flameproof enclosure
encapsulation "d"
Designation
II 1/2 G Ex d IIC T4, T6 Ga/Gb
Permissible ambient temperature -40 … +85 °C (-40 … +185 °F) temperature class T4
-40 … +60 °C (-40 … +140 °F) temperature class T6
Connection To a circuit with the operating values:
U
H
= 10.5 … 45 V DC
To a circuit with the operating values:
U
H
= 9 … 32 V DC
• Dust explosion protection for Zone
20 and 20/21
Designation
II 1 D Ex ta IIIC IP65 T120°C Da,
II 1/2 D Ex ta/tb IIIC IP65 T120°C Da/Db
Permissible ambient temperature
-40 ... +85 °C (-40 ... +185 °F)
max. surface temperature
120°C (248°F)
Connection To a certified intrinsically safe circuit
with the max. values:
U
i
= 30 V, I
i
= 100 mA,
P
i
= 750 mW, R
i
= 300 Ω
FISCO supply unit
U
0
= 17.5 V, I
0
= 380 mA, P
0
= 5.32 W
Linear barrier
U
0
= 24 V, I
0
= 250 mA, P
0
= 1.2 W
Effective inner capacitance
C
i
= 6 nF
C
i
= 1.1 nF
Effective inner inductance
L
i
= 0.4 mH
L
i
= 7 µH
• Dust explosion protection for Zone
22
Designation
II 2 D Ex tb IIIC IP65 T120°C Db
Connection To a circuit with the operating values:
U
H
= 10.5 … 45 V DC; P
max
= 1.2 W
To a circuit with the operating values:
U
H
= DC 9 … 32 V; P
max
= 1.2 W
• Type of protection "n" (Zone 2)
Designation
II 2/3 G Ex nA II T4/T5/T6 Gc
II 2/3 G Ex ic IIC T4/T5/T6 Gc
Connection "nA"
U
n
= 45 V
U
m
= 32 V
Connection "ic" To a circuit with the operating values:
U
i
= 45 V
FISCO supply unit
U
O
=17.5 V, I
O
= 570 mA
Linear barrier
U
0
= 32 V, I
0
= 132 mA, P
0
= 1 W
Effective inner capacitance
C
i
= 6 nF
C
i
= 1.1 nF