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Renesas RH850/F1Kx Series Hardware Design Guide

Renesas RH850/F1Kx Series
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RH850/F1Kx, RH850/F1K Series Hardware Design Guide
R01AN3841ED0110 Rev. 1.10 Page 85 of 108
August 8, 2019
4.5 Injected Current
The RH850/F1Kx, RH850/F1K series has different electrical characteristics for the injected current depending on the
pin group and device pins of the different package variants.
When a current is applied to the protection diodes of the device, the current that exceeds the limit of the microcontroller
will increase or decrease the supply voltage or GND level of the device. In such a case, the system should be configured
that the voltage at a pin is within the operation voltage range (-0.8V to 6.0V).
Please evaluate and confirm the influence caused by:
- the change of current on many ports at the same time
- impact to the operation by external noise
The protection diodes on the device differ from normal switching diodes and are not aimed as level-shifter of DC input
signals. Therefore, do not apply a sudden stress like a rush current to the protection diodes.
The value of R1, R2 and C depends on the usage condition and has to be defined based on application requirements.
Especially, in case of sensors the conversion accuracy of analog input signal depends on the scan period and impedance
of the sensors.
Figure 32: Mechanism of injection current
For details, please refer to Sections 47A.4.4, Injection Currents, 47B.4.4, Injection Currents or 47C.4.4, Injection
Currents of the RH850/F1KH, RH850/F1KM Hardware User’s Manual.
For details, please refer to Section 40.27 Injection Currents of the RH850/F1K Hardware User’s Manual.

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Renesas RH850/F1Kx Series Specifications

General IconGeneral
BrandRenesas
ModelRH850/F1Kx Series
CategoryComputer Hardware
LanguageEnglish

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