Hioki PW3360-21 - Page 192

12.3 Detailed Measurement Specifications
184
Measurement
accuracy
±1 dgt. relative to calculations from measured values
Lag/Lead
display
Uses the sign of reactive power Q (fundamental wave reactive
power).
Positive : Lag
Negative : Lead
Output data
For SD memory card and internal memory output data, the polarity
indicates lag/lead.
Lag : Positive
Lead: Negative
Reactive power (Q, PF/Q/S calculation s
e
lection: RMS calculations)
Reactive power (Q, PF/Q/S calculation selection: fundamental calculations)
This reactive power Q is defined as the fundamental wave reactive power.
Measurement
method
Calculated from fundamental wave voltage and current.
See: "Reactive power" (p. 202)
Measurement
range
Combination of voltage range × current range
See: 12.6, "Range Configuration and Accuracy by Clamp Sensor"
(p. 210)
Measurement
accuracy
With a fundamental wave frequency of 45 Hz to 66 Hz: ±0.3% rdg.
±0.1% f.s. + clamp sensor specifications (reactive factor = 1)
Phase effects Equivalent to ±0.3° of phase accuracy (at 50/60 Hz, f.s. input)
Lag/Lead 
display
Positive : Lag
Negative : Lead
Output data
For SD memory card and internal memory output data, the polarity
indicates lag/lead.
Lag : Positive
Lead: Negative
Apparent power (S, PF/Q/S calculation selection: RMS value calculation)
Measurement
method
Calculated from the voltage RMS and current RMS values.
See: "Apparent power" (p. 203)
Measurement
range
Combination of voltage × current range
See: 12.6, "Range Configuration and Accuracy by Clamp Sensor"
(p. 210)
Measurement
accuracy
±1 dgt. relative to calculations from measured values.