Introduction
6 iSeries Handbook
Again in 2000, the iSeries lead the industry by delivering the first server with the new
“Silicon-on-Insulator” (SOI) technology. SOI represents a fundamental advance in the way
chips are built. IBM's unique SOI process alters the design of transistors, essentially “turbo
charging” them, so they run faster and use less power. For example, a microprocessor
designed to operate at a given speed can instead be built using SOI technology to achieve
higher speeds. At the same time, if performance levels are held constant, SOI chips can
require as little as one-third the power of today's microchips. Silicon on Insulator is
technology used by the iStar processors. The transistors are built within and on top of a thin
layer of silicon that is on top of an insulating layer. The insulating layer is fabricated by
implanting a thin layer of oxide beneath the primary silicon surface of the wafer.
Pulsar, iStar, and SStar processors use on-chip copper-wiring technology. The Pulsar
processors integrate IBM CMOS7S technology. iStar and SStar processors integrate
CMOS8S technology. Previously, Northstar technology used aluminum for on-chip wiring.
Copper's better conductivity permits thinner wires to be used, which enables the transistors
to be packed closer together. The denser new technology permits additional
micro-architecture methods to improve performance.
Keeping multiple levels of high speed cache is still necessary to keep the processors busy.
Denser processor technology permits more on-chip cache. All this new technology is
implemented on the new iSeries servers.
SOI
Copper
Po wer4
Giga processor
Northstar
IStar
1999
2002/2003
2000
Silicon-On-I nsulator
2001
SStar
Pulsar
2003/2004
Power4
+
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