Minimum Typical Maximum
Duration of OFF state 100 ms
Switch-on delay 3 × response
t
ime
ON state, switching voltage HIGH
(U
rms
)
2)
U
V
– 2.25 V 24 V U
V
OFF state, switching voltage LOW
2)
3)
0 V 0 V 2.0 V
Current-carrying capacity of the
O
SSDs
500 mA each
Leakage current of the OSSDs 2 mA each
Load capacity 2.2 µF
Load inductance 2.2 H
Test pulse data
4)
Test pulse width 150 µs 300 µs
Test pulse rate 3 s
-1
5 s
-1
10 s
-1
Discrepancy time (time offset
be
tween switching of OSSD2 and
OSSD1)
1 ms
Inputs
Input voltage HIGH (active)
2)
11 V 24 V 30 V
Input current HIGH 6 mA 10 mA 20 mA
Input voltage LOW (deactivated)
2)
–3 V 0 V 5 V
Input current LOW -2.5 mA 0 mA 0.5 mA
External device monitoring input (EDM)
Connected contactors
Permissible dropout time 300 ms
Permissible pull in time 300 ms
Reset pushbutton input (RES)
Control switch actuation time 50 ms
Muting signal 1 and muting signal 2 inputs (In1, In2, In4)
Input filter 50 ms
Muting sensors
Output type PNP switching
Current consumption of a muting
sensor
50 mA
Supply voltage U
v
– 1 V U
v
Application diagnostic output (ADO)
PNP semiconductor, short-circuit protected
1)
Output voltage HIGH (active) U
V
– 3 V
Output voltage LOW (deactivated) High resistance
Output current HIGH (active) 100 mA
Permissible cable resistance
5)
Supply cable
6)
7)
1 Ω
8)
Cable between host and guest 1 Ω
Cable between OSSD and load 2.5 Ω
TECHNICAL DATA 13
8021645/1EB0/2022-04-28 | SICK O P E R A T I N G I N S T R U C T I O N S | deTec4
143
Subject to change without notice