Sample Application Programs
Flash EEPROM Test
Stress setup le for write pulse of NAND type.
Stress setup for write pulse of NAND type is stored in \NANWRT.STR" le
on provided diskette. As described previously, you must change line 2010 to
\NANWRT.STR" or your own custom le name.
In the NANWRT.STR le, the following is set up.You can modify these
settings in the NANWRT.STR le or your own le:
PGUs
Unit Period Width Delay
Time
Peak
Value
Base
Value
Leading
Time
Trailing
Time
Impedance
PGU1 (Gate)
413
s 400
s 0.0 s 20 V 0V 10
s 10
s 50 ohm
Unit Source Impedance
PGU2
1
0V 50 ohm
1
Connected to drain, source, and substrate, and set to
constant source.
Stress setup le for erase pulse of NAND type.
Stress setup for erase pulse of NAND type is stored in \NANERS
.STR" le on
provided diskette. As described previously, you must change line 2020 to
\NANERS.STR" or your own custom le name.
In the NANERS.STR le, the following is set up.You can modify these settings
in the NANERS.STR le or your own le:
PGUs
Unit Period Width Delay
Time
Peak
Value
Base
Value
Leading
Time
Trailing
Time
Impedance
PGU2
1
5.02 ms 5.00 ms 0.0 s 20 V 0V 10
s 10
s 50 ohm
1
connected to drain, source, and substrate.
Unit Source Impedance
PGU1
1
0V 50 ohm
1
Connected to gate, and set to constant source
6-13