Abov MC96F8204 Series

32
MC96F8204
ABOV Semiconductor Co., Ltd.
7.15 Internal Flash Rom Characteristics
(T
A
=-40°C ~ +85°C, VDD=1.8V ~ 5.5V, VSS= 0V)
Parameter
Symbol
Condition
MIN
TYP
MAX
Unit
Sector Write Time
t
FSW
–
–
2.5
2.7
ms
Sector Erase Time
t
FSE
–
–
2.5
2.7
Code Write Protection Time
t
FHL
–
–
2.5
2.7
Page Buffer Reset Time
t
FBR
–
–
–
5
us
Flash Programming Frequency
f
PGM
–
0.4
–
–
MHz
Endurance of Write/Erase
NF
WE
–
–
–
10,000
times
Flash Data Retention Time
t
RT
–
10
–
–
years
Table 7.15 Internal Flash Rom Characteristics
NOTE)
1. During a flash operation, SCLK[1:0] of SCCR must be set to “00” or “01” (INT-RC OSC or Main X-TAL
for system clock).
7.16 Input/Output Capacitance
(T
A
=-40°C ~ +85°C, VDD=0V)
Parameter
Symbol
Condition
MIN
TYP
MAX
Unit
Input Capacitance
C
IN
fx= 1MHz
Unmeasured pins are
connected to VSS
–
–
10
pF
Output Capacitance
C
OUT
I/O Capacitance
C
IO
Table 7.16 Input/Output Capacitance