5-50 Equation Reference
Variable
Description
gds
Output conductance
gm
Transconductance
I
Diode current
IB
Total base current
IC
Total collector current
ICEO
Collector current (collector-to-base open)
ICO
Collector current (emitter-to-base open)
ICS
Collector-to-base saturation current
ID, IDS
Drain current
IE
Total emitter current
IES
Emitter-to-base saturation current
IS
Transistor saturation current
J
Current density
Js
Saturation current density
L
Drawn mask length (PN Step Junctions), or
Le
Effectives gate length
NA
P-side doping (PN Step Junctions), or
ND
N-side doping (PN Step Junctions), or
T
Temperature
tox
Gate silicon dioxide thickness
Va
Applied voltage
VBC
Base-to-collector voltage
VBE
Base-to-emitter voltage
Vbi
Built-in voltage
VBS
Substrate voltage
VCEsat
Collector-to-emitter saturation voltage
VDS
Applied drain voltage
VDsat
Saturation voltage
VGS
Applied gate voltage
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