EasyManuals Logo

HP 48GII User Manual

HP 48GII
653 pages
To Next Page IconTo Next Page
To Next Page IconTo Next Page
To Previous Page IconTo Previous Page
To Previous Page IconTo Previous Page
Page #478 background imageLoading...
Page #478 background image
5-52 Equation Reference
Example:
Given: ND=1E22_cm^–3, NA=1E15_1/cm^3, T=26.85_°C, Js=1E–6_
µ
A/cm^2, Va=-20_V,
E1=3.3E5_V/cm, W=10_
µ, W=1_µ, L=10_µ, L=1_µ, xj=2_µ.
Solution: Vbi=.9962_V, xd=5.2551_
µ, Cj=2005.0141_pF/cm^2, Emax=79908.5240_V/cm,
BV=358.0825_V, J= -1.0E–12_A/cm^2, Aj=3.1993E–6_cm^2, I= -3.1993E–15_mA.
NMOS Transistors (13, 2)
These equations for a silicon NMOS transistor use a two-port network model. They include linear and nonlinear
regions in the device characteristics and are based on a gradual-channel approximation (the electric fields in the
direction of current flow are small compared to those perpendicular to the flow). The drain current and
transconductance calculations differ depending on whether the transistor is in the linear, saturated, or cutoff
region. The equations assume the physical geometry of the device is a rectangle, second-order length-parameter
effects are negligible, shot-channel, hot-carrier, and velocity-saturation effects are negligible, and subthreshold
currents are negligible. ( See “SIDENS” in Chapter 3.)
Equations:
W e W 2
W
=
I D S C o x
µ
n
W e
L e
- - - - - - - -
V G S V t
(
)
V D S
V DS
2
2
-
- - - - ----------
1
λ
+ VDS
( )
=
γ
2
ε
s i
ε
0 q
N
A
C o x
- - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - -
=
V t V t 0
γ
2 A B S
φ
p
(
)
A B S V B S
(
)
2 ABS
φ
p
( )
(
)
+ =
φ
p
k
T
q
- - - - - - - - - - - - - -
L
N
N
A
n i
- - - - - - - - -
=
g d s IDS
λ
=
g
m C o x
µ
m
W e
L e
- - - - - - - -
1
λ
+ V D S
(
)
2 IDS
=
V D s a t V G S V t
=
L e L 2
L
= Cox
ε
ox
ε
0
tox
--------------------
=
Example:
Given: tox=700_Å, NA=1E15_1/cm^3,
µ
n=600_cm^2/ (V
s), T=26.85_°C, Vt0=0.75_V, VGS=5_V,
VBS=0_V, VDS=5_V, W=25_
µ
, W=1_
µ
, L=4_m, L=0.75_
µ
, λ=0.05_1/V.
Solution: We=23_
µ
, Le=2.5_
µ
, Cox=49330.4750_pF/cm^2,
γ
=0.3725_V^.5,
φ
p= -.2898_V, Vt=0.75_V,
VDsat=4.25_V, IDS=3.0741_mA, gds=1.5370E–4_S, gm=1.4466_mA/V.

Table of Contents

Other manuals for HP 48GII

Questions and Answers:

Question and Answer IconNeed help?

Do you have a question about the HP 48GII and is the answer not in the manual?

HP 48GII Specifications

General IconGeneral
Battery typeCR2032
TypeScientific
Form factorPocket
Weight and Dimensions IconWeight and Dimensions
Weight220 g
Dimensions (WxDxH)184 x 87 x 23.5 mm

Related product manuals