HP 48GII

Equation Reference 5-49
Sphere (12, 4)
Equations:
V
4
3
---
π r
3
⋅⋅=
A4π r
2
⋅⋅=
I
2
5
---
mr
2
⋅⋅=
Id I m d
2
⋅+=
Example:
Given: d=14_cm, m=3.75_kg, Id=486.5_lb
∗ in^2.
Solution: r=21.4273_cm, V=41208.7268_cm^3, A=5769.5719_cm^2, I=0.0689_kg
∗ m^2.
Solid State Devices (13)
Variable
Description
α F
Forward common-base current gain
α R
Reverse common-base current gain
γ
Body factor
λ
Modulation parameter
µ n
Electron mobility
φ p
Fermi potential
∆L
Length adjustment (PN Step Junctions), or
Channel encroachment (NMOS Transistors)
∆W
Width adjustment (PN Step Junctions), or
Width contraction (NMOS Transistors)
a
Channel thickness
Aj
Effective junction area
BV
Breakdown voltage
Cj
Junction capacitance per unit area
Cox
Silicon dioxide capacitance per unit area
E1
Breakdown-voltage field factor
Emax
Maximum electric field
G0
Channel conductance