COBHAM GR740 User Manual

GR740-UM-DS, Nov 2017, Version 1.7 460 www.cobham.com/gaisler
GR740
40.3 Pin assignment
The pin assignment in table 597 shows the implementation characteristics of each signal in the device.
Pad drive strength is configurable and described in section 30. A BSDL file for the device is available
from Cobham Gaisler
.
Table 597.Pin assignment
Position Signal Name I/O Level
Vol t.
[V] Pull Polarity Note
A1 GND Power/ground pin GND
A2 GND Power/ground pin GND
A3 PROMIO_ADDR[6] O LVCMOS 3.3 - PROM
A4 PROMIO_ADDR[2] O LVCMOS 3.3 - PROM
A5 PROMIO_WEN O LVCMOS 3.3 - Low PROM
A6 PROMIO_DATA[14] IO LVCMOS 3.3 - PROM
A7 PROMIO_DATA[10] IO LVCMOS 3.3 - PROM
A8 PROMIO_DATA[6] IO LVCMOS 3.3 - PROM
A9 PROMIO_DATA[2] IO LVCMOS 3.3 - PROM
A10 GR1553_BUSATXIN O LVCMOS 3.3 - MIL-1553
A11 SPI_MOSI IO LVCMOS 3.3 - SPI
A12 SYS_CLK I LVCMOS 3.3 - Sys/spw CLK
A13 MEM_EXTCLK I LVCMOS 3.3 - Sys/spw CLK
A14 SYS_EXTLOCK I LVCMOS 3.3 - Sys/spw CLK
A15 JTAG_TCK I LVCMOS 3.3 - JTAG
A16 JTAG_TRST I LVCMOS 3.3 - Low JTAG
A17 GPIO[14] IO LVCMOS 3.3 - GPIO
A18 GPIO[12] IO LVCMOS 3.3 - GPIO
A19 GPIO[8] IO LVCMOS 3.3 - GPIO
A20 GPIO[4] IO LVCMOS 3.3 - GPIO
A21 GPIO[0] IO LVCMOS 3.3 - GPIO
A22 PLL_BYPASS[0] I LVCMOS 3.3 - High Bootstrap
A23 GND Power/ground pin GND
A24 GND Power/ground pin GND
A25 GND Power/ground pin GND
B1 GND Power/ground pin GND
B2 PROMIO_ADDR[9] O LVCMOS 3.3 - PROM
B3 PROMIO_ADDR[8] O LVCMOS 3.3 - PROM
B4 PROMIO_ADDR[4] O LVCMOS 3.3 - PROM
B5 PROMIO_ADDR[0] O LVCMOS 3.3 - PROM
B6 PROMIO_READ O LVCMOS 3.3 - High PROM
B7 PROMIO_DATA[12] IO LVCMOS 3.3 - PROM
B8 PROMIO_DATA[8] IO LVCMOS 3.3 - PROM
B9 PROMIO_DATA[4] IO LVCMOS 3.3 - PROM
B10 GR1553_CLK I LVCMOS 3.3 - MIL-1553
B11 SPI_MISO IO LVCMOS 3.3 - SPI
B12 SPW_CLK I LVCMOS 3.3 - Sys/spw CLK
B13 SYS_RESETN I LVCMOS 3.3 - Low Sys/spw CLK
B14 JTAG_TMS I LVCMOS 3.3 - JTAG

COBHAM GR740 Specifications

General

Brand	COBHAM
Model	GR740
Category	Computer Hardware
Language	English