GR740-UM-DS, Nov 2017, Version 1.7 472 www.cobham.com/gaisler
GR740
AA22 MEM_DQ[92] IO LVCMOS 3.3 - SDRAM
AA23 MEM_DQ[94] IO LVCMOS 3.3 - SDRAM
AA24 MEM_CLK_OUT_DIFF_P O LVDS 2.5 - Pos SDRAM
AA25 MEM_CLK_OUT_DIFF_N O LVDS 2.5 - Neg SDRAM
AB1 MEM_DQM[3] O LVCMOS 3.3 - Low SDRAM
AB2 MEM_DQ[25] IO LVCMOS 3.3 - SDRAM
AB3 MEM_DQ[26] IO LVCMOS 3.3 - SDRAM
AB4 MEM_DQ[28] IO LVCMOS 3.3 - SDRAM
AB5 MEM_DQ[24] IO LVCMOS 3.3 - SDRAM
AB6 MEM_DQM[4] IO LVCMOS 3.3 - Low SDRAM
AB7 MEM_DQ[44] IO LVCMOS 3.3 - SDRAM
AB8 MEM_CLK_IN I LVCMOS 3.3 - SDRAM
AB9 MEM_ADDR[1] O LVCMOS 3.3 - SDRAM
AB10 MEM_ADDR[3] O LVCMOS 3.3 - SDRAM
AB11 MEM_ADDR[11] O LVCMOS 3.3 - SDRAM
AB12 MEM_BA[0] O LVCMOS 3.3 - SDRAM
AB13 MEM_CKE[1] O LVCMOS 3.3 - High SDRAM
AB14 MEM_DQ[49] IO LVCMOS 3.3 - SDRAM
AB15 MEM_DQ[55] IO LVCMOS 3.3 - SDRAM
AB16 MEM_DQ[59] IO LVCMOS 3.3 - SDRAM
AB17 MEM_DQ[61] IO LVCMOS 3.3 - SDRAM
AB18 MEM_DQ[67] IO LVCMOS 3.3 - SDRAM
AB19 MEM_DQ[71] IO LVCMOS 3.3 - SDRAM
AB20 MEM_DQ[77] IO LVCMOS 3.3 - SDRAM
AB21 MEM_DQ[86] IO LVCMOS 3.3 - SDRAM
AB22 MEM_DQM[10] IO LVCMOS 3.3 - Low SDRAM
AB23 MEM_DQ[90] IO LVCMOS 3.3 - SDRAM
AB24 MEM_DQ[95] IO LVCMOS 3.3 - SDRAM
AB25 MEM_DQ[93] IO LVCMOS 3.3 - SDRAM
AC1 MEM_DQ[29] IO LVCMOS 3.3 - SDRAM
AC2 MEM_DQ[27] IO LVCMOS 3.3 - SDRAM
AC3 MEM_DQ[30] IO LVCMOS 3.3 - SDRAM
AC4 MEM_DQ[32] IO LVCMOS 3.3 - SDRAM
AC5 MEM_DQ[34] IO LVCMOS 3.3 - SDRAM
AC6 MEM_DQ[38] IO LVCMOS 3.3 - SDRAM
AC7 MEM_DQ[42] IO LVCMOS 3.3 - SDRAM
AC8 VDIG3V3 Power/ground pin VDIG3V3
AC9 VSS3V3 Power/ground pin VSS3V3
AC10 MEM_ADDR[5] O LVCMOS 3.3 - SDRAM
AC11 MEM_ADDR[9] O LVCMOS 3.3 - SDRAM
AC12 VDIG3V3 Power/ground pin VDIG3V3
AC13 VSS3V3 Power/ground pin VSS3V3
AC14 GND Power/ground pin GND
AC15 MEM_DQ[52] IO LVCMOS 3.3 - SDRAM
Table 597.Pin assignment
Position Signal Name I/O Level
Vol t.
[V] Pull Polarity Note