COBHAM GR740 - Page 473

GR740-UM-DS, Nov 2017, Version 1.7 473 www.cobham.com/gaisler
GR740
AC16 MEM_DQ[57] IO LVCMOS 3.3 - SDRAM
AC17 MEM_DQ[63] IO LVCMOS 3.3 - SDRAM
AC18 MEM_DQ[68] IO LVCMOS 3.3 - SDRAM
AC19 MEM_DQM[9] O LVCMOS 3.3 - Low SDRAM
AC20 MEM_DQ[75] IO LVCMOS 3.3 - SDRAM
AC21 MEM_DQ[81] IO LVCMOS 3.3 - SDRAM
AC22 MEM_DQ[82] IO LVCMOS 3.3 - SDRAM
AC23 MEM_DQ[91] IO LVCMOS 3.3 - SDRAM
AC24 MEM_DQ[89] IO LVCMOS 3.3 - SDRAM
AC25 MEM_DQM[11] IO LVCMOS 3.3 - Low SDRAM
AD1 GND Power/ground pin GND
AD2 GND Power/ground pin GND
AD25 GND Power/ground pin GND
AD3 MEM_DQ[31] IO LVCMOS 3.3 - SDRAM
AD4 MEM_DQ[35] IO LVCMOS 3.3 - SDRAM
AD5 MEM_DQ[39] IO LVCMOS 3.3 - SDRAM
AD6 MEM_DQ[41] IO LVCMOS 3.3 - SDRAM
AD7 MEM_DQ[45] IO LVCMOS 3.3 - SDRAM
AD8 MEM_SN[0] O LVCMOS 3.3 - Low SDRAM
AD9 MEM_ADDR[2] O LVCMOS 3.3 - SDRAM
AD10 MEM_ADDR[6] O LVCMOS 3.3 - SDRAM
AD11 MEM_ADDR[10] O LVCMOS 3.3 - SDRAM
AD12 MEM_ADDR[14] O LVCMOS 3.3 - SDRAM
AD13 MEM_RASN O LVCMOS 3.3 - Low SDRAM
AD14 MEM_DQ[50] IO LVCMOS 3.3 - SDRAM
AD15 MEM_DQM[6] IO LVCMOS 3.3 - Low SDRAM
AD16 MEM_DQ[56] IO LVCMOS 3.3 - SDRAM
AD17 MEM_DQ[60] IO LVCMOS 3.3 - SDRAM
AD18 MEM_DQ[64] IO LVCMOS 3.3 - SDRAM
AD19 MEM_DQM[8] O LVCMOS 3.3 - Low SDRAM
AD20 MEM_DQ[74] IO LVCMOS 3.3 - SDRAM
AD21 MEM_DQ[78] IO LVCMOS 3.3 - SDRAM
AD22 MEM_DQ[87] IO LVCMOS 3.3 - SDRAM
AD23 MEM_DQ[85] IO LVCMOS 3.3 - SDRAM
AD24 MEM_DQ[84] IO LVCMOS 3.3 - SDRAM
AE1 GND Power/ground pin GND
AE2 GND Power/ground pin GND
AE3 MEM_DQ[33] IO LVCMOS 3.3 - SDRAM
AE4 MEM_DQ[37] IO LVCMOS 3.3 - SDRAM
AE5 MEM_DQM[5] IO LVCMOS 3.3 - Low SDRAM
AE6 MEM_DQ[43] IO LVCMOS 3.3 - SDRAM
AE7 MEM_DQ[47] IO LVCMOS 3.3 - SDRAM
AE8 MEM_ADDR[0] O LVCMOS 3.3 - SDRAM
AE9 MEM_ADDR[4] O LVCMOS 3.3 - SDRAM
Table 597.Pin assignment
Position Signal Name I/O Level
Vol t.
[V] Pull Polarity Note