GR740-UM-DS, Nov 2017, Version 1.7 474 www.cobham.com/gaisler
GR740
AE10 MEM_ADDR[8] O LVCMOS 3.3 - SDRAM
AE11 MEM_ADDR[12] O LVCMOS 3.3 - SDRAM
AE12 MEM_BA[1] O LVCMOS 3.3 - SDRAM
AE13 MEM_CKE[0] O LVCMOS 3.3 - High SDRAM
AE14 MEM_DQ[48] IO LVCMOS 3.3 - SDRAM
AE15 MEM_DQ[54] IO LVCMOS 3.3 - SDRAM
AE16 MEM_DQ[58] IO LVCMOS 3.3 - SDRAM
AE17 MEM_DQ[62] IO LVCMOS 3.3 - SDRAM
AE18 MEM_DQ[66] IO LVCMOS 3.3 - SDRAM
AE19 MEM_DQ[70] IO LVCMOS 3.3 - SDRAM
AE20 MEM_DQ[72] IO LVCMOS 3.3 - SDRAM
AE21 MEM_DQ[76] IO LVCMOS 3.3 - SDRAM
AE22 MEM_DQ[80] IO LVCMOS 3.3 - SDRAM
AE23 MEM_DQ[83] IO LVCMOS 3.3 - SDRAM
AE24 GND Power/ground pin GND
AE25 GND Power/ground pin GND
Table 597.Pin assignment
Position Signal Name I/O Level
Vol t.
[V] Pull Polarity Note
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