Motorola MC68HC908AB32 - EEPROM and Memory Characteristics

Electrical Specifications
EEPROM and Memory Characteristics
MC68HC908AB32 — Rev. 1.0 Technical Data
MOTOROLA Electrical Specifications 377
23.7 EEPROM and Memory Characteristics
Low-voltage inhibit reset/recover hysteresis – target
H
LVI
100 150 — mV
POR rearm voltage
(7)
V
POR
0 — 200 mV
POR reset voltage
(8)
V
PORRST
0 — 800 mV
POR rise time ramp rate
(9)
R
POR
0.02 — — V/ms
Notes:
1. V
DD
= 5.0 Vdc ± 10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
2. Typical values reflect average measurements at midpoint of voltage range, 25 °C only.
3. Run (operating) I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc
loads. Less than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
affects run I
DD
. Measured with all modules enabled.
4. Wait I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc loads. Less
than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
I
DD
. Measured with PLL and LVI enabled.
5. Stop I
DD
is measured with OSC1 = V
SS
.
6. Pullups are disabled. Port B leakage is specified in 23.10 ADC Characteristics.
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
DD
is not reached before the internal POR reset is released, RST must be driven low externally until minimum
V
DD
is reached.
Characteristic Symbol Min Max Unit
RAM data retention voltage
V
RDR
0.7 — V
EEPROM programming time per byte
t
EEPGM
10 — ms
EEPROM erasing time per byte
t
EBYTE
10 — ms
EEPROM erasing time per block
t
EBLOCK
10 — ms
EEPROM erasing time per bulk
t
EBULK
10 — ms
EEPROM programming voltage discharge period
t
EEFPV
100 — µs
Number of programming operations to the same EEPROM
byte before erase
(1)
Notes:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
——8—
EEPROM write/erase cycles at 10ms write time (85°C) — 10,000 — Cycles
EEPROM data retention after 10,000 write/erase cycles — 10 — Years
Characteristic
(1)
Symbol Min Typ
(2)
Max Unit