Chapter 1
Overview
Electrical Characteristics I - 21
1.4.2 Operating Condition
B. Operating Condition
V
SS
= 0 V
Ta = -40 °C to +85 °C
Parameter Symbol Condition
Limits
Unit
MIN TYP MAX
Supply voltage *5
B1
Supply voltage
V
DD1
f
SYSCLK
≤ 10.0 MHz
1.8 -- 3.6
V
B2
V
DD2
f
SYSCLK
≤ 1.0 MHz *6
1.3 -- 3.6
B3
V
DD3
f
SYSCLK
≤ 40 kHz *7 *9
1.1 -- 3.6
B4
RAM retention
supply voltage
V
DD4
At STOP mode *9 1.1 -- 3.6
Operating speed *8
B5
Instruction execution time
1/f
SYSCLK
t
c1
V
DD30
= 1.8 V to 3.6 V
0.1 -- --
µsB6
t
c2
V
DD30
= 1.3 V to 3.6 V
1.0 -- --
B7
t
c3
V
DD30
= 1.1 V to 3.6 V *9
25.0 -- --
*5 f
SYSCLK
: Frequency for the system clock
*6 When f
SYSCLK
is generated by using the internal high-speed oscillation.
*7 When f
SYSCLK
is generated by using the external low-speed oscillation or the internal low-speed oscillation.
*8 tc1,2: When f
SYSCLK
is generated by using the internal high-speed oscillation or the external high-speed oscillation.
(However, for tc2, only by using the internal high-speed oscillation)
tc3: When f
SYSCLK
is generated by using the internal low-speed oscillation.
*9 When using auto reset function, the lowest voltage is the auto reset detection voltage.
V
DD30
= V
RSTL
to 3.6 V, V
SS
= 0 V
V
RSTL
= 1.1 V at auto reset function
Ta = -40 °C to +85 °C
Parameter Symbol Condition
Limits
Unit
MIN TYP MAX
Crystal oscillation 1 Figure:1.4.1 (MN101LR02D is not applicable.)
B8 Frequency
F
HOSCCLK
V
DD30
= 1.8 V to 3.6 V
1.0 -- 10.0 MHz
Crystal oscillation 2 Figure:1.4.2
B9 Frequency
F
SOSCCLK
V
DD30
= V
RSTL
to 3.6 V
-- 32.768 -- kHz
Internal high-speed RC oscillation *10
B10
Frequency
F
HRCCLK10
V
DD30
= 1.8 V to 3.6 V
FCNT = "00"
-- 10 -- MHz
B11
F
HRCCLK8
V
DD30
= 1.8 V to 3.6 V
FCNT = "01"
-- 8 -- MHz
B12
F
HRCCLK1
V
DD30
= 1.3 V to 3.6 V
FCNT = "10"
-- 1 -- MHz