Panasonic MN101L Series

Chapter 18
ReRAM
XVIII - 2 Overview of ReRAM
18.1 Overview of ReRAM
Table:18.1.1 shows the outline of ReRAM specifications.
Table:18.1.1 Outline of ReRAM Specifications
18.1.1 ReRAM Rewriting Method
The data of ReRAM can be programmed with the following method.
 Programmer writing
ReRAM is programmed with an external unit such as a debugger (PanaX-EX) or a serial programmer.
 Self-programming
ReRAM is programmed with the software embedded in the program area.
Function Description
Memory size 64 KB
Program endurance
Program area (62 KB): 1000 times (Min.)
Data area (2 KB): 100,000 times (Min.)
Programming Voltage
V
DD30
: 1.8 V to 3.6 V
Reading Voltage
V
DD30
: 1.1 V to 3.6 V
Data retention duration 10 years
ReRAM programming method
Programmer writing
Self-programming
Programming data unit 1 Byte (Max. 64 Bytes at once.)
Function of data protection
Protective function
Security function