Samsung S3F84B8 - LDCI;LDEI - Load Memory and Increment

S3F84B8_UM_REV 1.00 6 INSTRUCTION SET
6-54
6.3.41 LDCI/LDEI — LOAD MEMORY AND INCREMENT
LDCI/LDEI dst,src
Operation: dst  src
rr  rr + 1
These instructions are used for user stacks or block transfers of data from program or data
memory to the register file. The address of memory location is specified by a working register
pair. The contents of source location are loaded into destination location, following which the
memory address is incremented automatically. The contents of source remain unaffected.
LDCI refers to the program memory and LDEI refers to the external data memory. The assembler
makes ‘Irr’ even for program memory and odd for data memory.
Flags: No flags are affected.
Format:
Bytes Cycles Opcode
(Hex)
Addr Mode
dst src
opc dst | src 2 10 E3 r Irr
Examples: Given R6 = 10H, R7 = 33H, R8 = 12H; program memory locations 1033H = 0CDH and 1034H =
0C5H; external data memory locations 1033H = 0DDH and 1034H = 0D5H:
LDCI R8,@RR6 ; 0CDH (contents of program memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6  RR6 + 1)
; R8 = 0CDH, R6 = 10H, R7 = 34H
LDEI R8,@RR6 ; 0DDH (contents of data memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6  RR6 + 1)
; R8 = 0DDH, R6 = 10H, R7 = 34H