Samsung S3F84B8 - Figure 21-6 Circuit Diagram to Improve the EFT Characteristics

S3F84B8_UM_REV 1.00 21 ELECTRICAL DATA
21-12
VSS VDD
104
S3F84B8
NOTE: To have better EFT performance , It is recommended to
1. Add a 104 capacitor as close to the VDD pin as possible
.
2.
Use 104,102 or 101 capacitor at all input pins, especially the anlog input pins
Figure 21-6 Circuit Diagram to Improve the EFT Characteristics
Table 21-12 ESD Characteristics
Parameter Symbol Conditions Minimum Typical Maximum Unit
HBM 2000 – – V
MM 200 – – V
Electrostatic discharge
V
ESD
CDM 500 – – V