Revision 0.9
15
PC SGRAM Specification
7.2 Precharge Selected Bank
The precharge operation should be performed on the active bank when precharge selected bank
command is issued. When the precharge command is issued with address A8/A9
low, BA selects
the bank to be precharged. At the end of the precharge selected bank command the selected bank
should be in idle state after the minimum T
RP
is met.
7.3 Precharge All
All the banks should be precharged at the same time when this command is issued. When the
precharge command is issued with address A8/A9 high, then all the banks will be precharged. At
the end of the precharge all command all the banks should be in idle state after the minimum T
RP
is
met.
7.4 NOP and Device Deselect
The device should be deselected by deactivating the CS# signal. In this mode SGRAM should
ignore all the control inputs. The SGRAM is put in NOP mode when CS# is active and by
deactivating RAS#, CAS# and WE#. For both Deselect and NOP the device should finish the
current operation when this command is issued.
7.5 Row activate
This command is used to select a row in a specified bank of the device. Read and write operations
can only be initiated on this activated bank after the minimum T
RCD
time is elapsed from the
activate command.
7.6 Read Bank
This command is used after the row activate command to initiate the burst read of data. The read
command is initiated by activating CS#, CAS# and de-asserting WE# at the same clock sampling
(rising) edge as described in the command truth table. The length of the burst and the CAS latency
time will be determined by the values programmed during the MRS command.
7.7 Write Bank
This command is used after the row activate command to initiate the burst write of data. The write
command is initiated by activating CS#, CAS# and WE# at the same clock sampling (rising) edge
as described in the command truth table. The length of the burst will be determined by the values
programmed during the MRS command.
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