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FEI Scios 2 - Page 167

FEI Scios 2
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Operating Procedures: Patterning
C O N F I D E N T I A L – FEI Limited Rights Data 5-57
First stage
Mill a Regular Cross Section with five superimposed box patterns sharing common edges.
1. Select the display 1, the electron beam and start the beam.
2. Perform the eucentric position setting procedure.
3. Move the stage to where you want to mill the cross section.
4. Tilt the stage to 52°.
5. Store this position in the Stage module / Location list.
6. Move the stage to an adjacent position for optimization of the ion beam imaging.
7. Perform the Beams coincidence setting procedure.
8. Select the display 2 and set the ion beam current to 150 pA – 5 nA, depending on the size of the cross section.
9. Optimize the ion beam imaging.
10. Move the stage to the stored position (see the step No. 5).
11. Set magnification and the sample position.
12. Acquire a ion beam Snapshot image.
13. Select the Patterning Control module / Pattern type selector / Regular Cross Section.
Draw a rectangular box about 2 µm from the area of interest.
14. Set the Property tab module / Application item / Si New and the Property tab module / Z size value as needed.
15. Acquire a ion beam Snapshot image.
16. Click on the toolbar Start patterning icon.
17. Acquire an electron or ion beam Snapshot image as desired to monitor the process.
Secon stage (optional)
1. Perform the Beams coincidence setting procedure.
2. Set the ion beam current to approximately ¼ of the beam current used for the first stage.
3. Acquire a ion beam Snapshot image.
4. Select the Patterning Control module / Pattern type selector / Cleaning Cross Section and draw a rectangular box.
Adjust its size so that its leading face is approximately 0.2 µm from the target area and the trailing edge extends
just beyond the rough cut.
Note
Remember to set the Property tab module / Z size value
5. Acquire another ion beam Snapshot to check positioning of the pattern to the feature.
6. Click on the toolbar Start Patterning icon.
7. Acquire an electron Snapshot image in a different display.
Third stage
1. Acquire a ion beam Snapshot image in the display where milling takes place. Focus as needed.
2. If the cut is too rough, change the ion beam current to 100 pA1 nA.
3. Select the Patterning Control module / Pattern type selector / Cleaning Cross Section item and draw a rectangular
box. Adjust its size so that its leading face crosses the target area and the trailing edge extends just beyond the
rough cut.
Note
Remember to set the Property tab module / Z size value
4. Acquire a ion beam Snapshot image.
5. Click on the toolbar Start Patterning icon.
6. Acquire an electron Snapshot image in a different display. A BSE detector (T1) is suitable for electron imaging
during ion patterning.

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