MB95630H Series
MN702-00009-2v0-E FUJITSU SEMICONDUCTOR LIMITED 537
CHAPTER 26 DUAL OPERATION FLASH MEMORY
26.1 Overview
■ Features of Dual Operation Flash Memory
• Sector configuration
- 8 Kbyte (4 Kbyte + 2 Kbyte × 2)
- 12 Kbyte (8 Kbyte + 2 Kbyte × 2)
- 20 Kbyte (16 Kbyte + 2 Kbyte × 2)
- 36 Kbyte (32 Kbyte + 2 Kbyte × 2)
• Two-bank configuration, enabling simultaneous execution of a program/erase operation and
a read operation
• Automatic algorithm (Embedded Algorithm)
• Erase-suspend/erase-resume functions integrated
• Detecting the completion of programming/erasing using the data polling flag or the toggle
bit
• Detecting the completion of programming/erasing by CPU interrupts
• Capable of erasing data in specific sectors (any combination of sectors)
• Compatible with JEDEC standard commands
• Number of program/erase cycles (minimum): 100000
• Flash read cycle time (minimum): 1 machine cycle
■ Programming and Erasing Flash Memory
• Programming data to and reading data from the same bank of the Flash memory cannot be
executed simultaneously.
• To program data to or erase data from a bank in the Flash memory, copy the program for
programming/erasing either to another bank or to the RAM first, and then execute the
program.
• The dual operation Flash memory enables programming in the Flash memory and
controlling programming by using interrupts. In addition, it is not necessary to download a
program to RAM in order to program data to a bank, thereby reducing the time of program
download and eliminating the need to protecting RAM data against power interruption.
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