Renesas H8 Series Hardware Manual

Section 16 Electrical Characteristics
Rev. 7.00 Mar 10, 2005 page 523 of 652
REJ09B0042-0700
16.8.6 Flash Memory Characteristics
Table 16.26 Flash Memory Characteristics
Condition: AV
CC
= 2.7 V to 5.5 V, V
SS
= AV
SS
= 0.0 V, V
CC
= 2.7 V to 5.5 V (range of
operating voltage when reading), V
CC
= 3.0 V to 5.5 V (range of operating voltage
when programming/erasing), T
a
= –20°C to +75°C (range of operating temperature
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Values
Item Symbol
Min Typ Max
Unit
Test
Conditions
Programming time
*
1
*
2
*
4
t
P
— 7 200 ms/128 bytes
Erase time
*
1
*
3
*
5
t
E
— 100 1200 ms/block
Reprogramming count N
WEC
1000
*
8
10000
*
9
—times
Data retain period t
DRP
10
*
10
——year
Programming Wait time after
SWE-bit setting
*
1
x 1 ——µs
Wait time after
PSU-bit setting
*
1
y 50——µs
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
Wait time after
P-bit setting
*
1
*
4
z3 8 1012µs Additional
programming
Wait time after
P-bit clear
*
1
α 5 ——µs
Wait time after
PSU-bit clear
*
1
β 5 ——µs
Wait time after
PV-bit setting
*
1
γ 4 ——µs
Wait time after
dummy write
*
1
ε 2 ——µs
Wait time after
PV-bit clear
*
1
η 2 ——µs
Wait time after
SWE-bit clear
*
1
θ 100——µs
Maximum
programming
count
*
1
*
4
*
5
N ——1000times

Renesas H8 Series Specifications

General

Brand	Renesas
Model	H8 Series
Category	Computer Hardware
Language	English