Section 6 ROM
Rev. 7.00 Mar 10, 2005 page 184 of 652
REJ09B0042-0700
6.10.5 Auto-Erase Mode
1. Auto-erase mode supports only entire memory erasing.
2. Do not perform a command write during auto-erasing.
3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also
be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin).
4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling
CE
and
OE
.
5. Table 6.18 shows the AC characteristics.
Table 6.18 AC Characteristics in Auto-Erase Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 6.18
CE
hold time t
ceh
0—ns
CE
setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
Status polling start time t
ests
1—ms
Status polling access time t
spa
— 150 ns
Memory erase time t
erase
100 40000 ms
WE
rise time t
r
—30ns
WE
fall time t
f
—30ns