Renesas H8 Series Hardware Manual

Section 6 ROM
Rev. 7.00 Mar 10, 2005 page 179 of 652
REJ09B0042-0700
6.10.3 Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 6.13
CE hold time t
ceh
0—ns
CE setup time t
ces
0—ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE rise time t
r
—30ns
WE fall time t
f
—30ns
CE
OE
CE
A15−A0
OE
WE
I/O7−I/O0
Note: Data is latched on the rising edge of WE.
t
ceh
t
wep
t
f
t
r
t
ces
t
nxtc
Address stable
t
ds
t
dh
Command write Memory read mode
Figure 6.13 Timing Waveforms for Memory Read after Memory Write

Renesas H8 Series Specifications

General

Brand	Renesas
Model	H8 Series
Category	Computer Hardware
Language	English