Epson S1D13706 - Table 5-1: Absolute Maximum Ratings; Table 5-2: Recommended Operating Conditions; Table 5-3: Electrical Characteristics for VDD = 3.3 V Typical; D.C. Characteristics

Page 32
Epson Research and Development
Vancouver Design Center
S1D13706 Hardware Functional Specification
X31B-A-001-08 Issue Date: 01/11/13
5 D.C. Characteristics
Note
The S1D13706 requires that Core VDD
≤
HIO VDD and Core VDD
≤
NIO VDD.
Table 5-1: Absolute Maximum Ratings
Symbol Parameter Rating Units
Core V
DD
Supply Voltage V
SS
- 0.3 to 4.0 V
IO V
DD
Supply Voltage V
SS
- 0.3 to 4.0 V
V
IN
Input Voltage V
SS
- 0.3 to IO V
DD
+ 0.5 V
V
OUT
Output Voltage V
SS
- 0.3 to IO V
DD
+ 0.5 V
T
STG
Storage Temperature -65 to 150
°
C
T
SOL
Solder Temperature/Time 260 for 10 sec. max at lead
°
C
Table 5-2: Recommended Operating Conditions
Symbol Parameter Condition Min Typ Max Units
Core V
DD
Supply Voltage V
SS
= 0 V
1.8 2.0 2.2 V
3.0 3.3 3.6 V
HIO V
DD
Supply Voltage V
SS
= 0 V
1.8 2.0 2.2 V
3.0 3.3 3.6 V
NIO V
DD
Supply Voltage V
SS
= 0 V 3.0 3.3 3.6 V
V
IN
Input Voltage V
SS
IO V
DD
V
T
OPR
Operating Temperature -40 25 85
°
C
Table 5-3: Electrical Characteristics for VDD = 3.3V typical
Symbol Parameter Condition Min Typ Max Units
I
DDS
Quiescent Current Quiescent Conditions 170
µ
A
I
IZ
Input Leakage Current -1 1
µ
A
I
OZ
Output Leakage Current -1 1
µ
A
V
OH
High Level Output Voltage
VDD = min
I
OH
= -6mA (Type 2)
-12mA (Type 3)
V
DD
- 0.4 V
V
OL
Low Level Output Voltage
VDD = min
I
OL
= 6mA (Type 2)
12mA (Type 3)
0.4 V
V
IH
High Level Input Voltage LVTTL Level, V
DD
= max 2.0 V
V
IL
Low Level Input Voltage LVTTL Level, V
DD
= min 0.8 V
V
T+
High Level Input Voltage LVTTL Schmitt 1.1 2.4 V
V
T-
Low Level Input Voltage LVTTL Schmitt 0.6 1.8 V
V
H1
Hysteresis Voltage LVTTL Schmitt 0.1 V
R
PD
Pull Down Resistance V
I
= V
DD
20 50 120 k
Ω
C
I
Input Pin Capacitance 10 pF
C
O
Output Pin Capacitance 10 pF
C
IO
Bi-Directional Pin Capacitance 10 pF