NXP Semiconductors
UM11227
NTM88 family of tire pressure monitor sensors
UM11227 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved.
User manual Rev. 6 — 24 April 2020
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pump associated with the FLASH memory must be enabled to supply high voltage to the
array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and then remains enabled
after completion of the burst program operation if these two conditions are met:
• The next burst program command has been queued before the current program
operation has completed.
• The next sequential address selects a byte on the same physical row as the current
byte being programmed. A row of FLASH memory consists of 64 bytes. A byte within
a row is selected by addresses A5 through A0. A new row begins when addresses A5
through A0 are all zero.
The first byte of a series of sequential bytes being programmed in burst mode will
take the same amount of time to program as a byte programmed in standard mode.
Subsequent bytes will program in the burst program time provided that the conditions
above are met. In the case the next sequential address is the beginning of a new row,
the program time for that byte will be the standard time instead of the burst time. This is
because the high voltage to the array must be disabled and then enabled again. If a new
burst command has not been queued before the current command completes, then the
charge pump will be disabled and high voltage removed from the array.
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