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NXP Semiconductors UM11227 - Page 36

NXP Semiconductors UM11227
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NXP Semiconductors
UM11227
NTM88 family of tire pressure monitor sensors
UM11227 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2020. All rights reserved.
User manual Rev. 6 — 24 April 2020
36 / 205
Table 10. BDC command summary
Command
Mnemonic
Active BDM/
Non-intrusive
Coding
Structure
Description
SYNC Non-intrusive n/a
[1]
Request a timed reference pulse to determine target BDC
communication speed
ACK_ENABLE Non-intrusive D5/d
Enable acknowledge protocol. Refer to NXP document order no.
HCS08RMv1/D.
ACK_DISABLE Non-intrusive D6/d
Disable acknowledge protocol. Refer to NXP document order no.
HCS08RMv1/D.
BACKGROUND Non-intrusive 90/d
Enter ACTIVE BACKGROUND mode if enabled (ignore if
ENBDM bit equals 0)
READ_STATUS Non-intrusive E4/SS Read BDC status from BDCSCR
WRITE_CONTROL Non-intrusive C4/CC Write BDC controls in BDCSCR
READ_BYTE Non-intrusive E0/AAAA/d/RD Read a byte from target memory
READ_BYTE_WS Non-intrusive
E1/AAAA
/d/SS/RD
Read a byte and report status
READ_LAST Non-intrusive E8/SS/RD Re-read byte from address just read and report status
WRITE_BYTE Non-intrusive C0/AAAA/WD/d Write a byte to target memory
WRITE_BYTE_WS Non-intrusive
C1/AAAA
/WD/d/SS
Write a byte and report status
READ_BKPT Non-intrusive E2/RBKP Read BDCBKPT breakpoint register
WRITE_BKPT Non-intrusive C2/WBKP Write BDCBKPT breakpoint register
GO Active BDM 08/d
Go to execute the user application program starting at the
address currently in the PC
TRACE1 Active BDM 10/d
Trace 1 user instruction at the address in the PC, then return to
ACTIVE BACKGROUND mode
TAGGO Active BDM 18/d
Same as GO but enable external tagging (HCS08 devices have
no external tagging pin)
READ_A Active BDM 68/d/RD Read accumulator (A)
READ_CCR Active BDM 69/d/RD Read condition code register (CCR)
READ_PC Active BDM 6B/d/RD16 Read program counter (PC)
READ_HX Active BDM 6C/d/RD16 Read H and X register pair (H:X)
READ_SP Active BDM 6F/d/RD16 Read stack pointer (SP)
READ_NEXT Active BDM 70/d/RD Increment H:X by one then read memory byte located at H:X
READ_NEXT_WS Active BDM 71/d/SS/RD
Increment H:X by one then read memory byte located at H:X.
Report status and data.
WRITE_A Active BDM 48/WD/d Write accumulator (A)
WRITE_CCR Active BDM 49/WD/d Write condition code register (CCR)
WRITE_PC Active BDM 4B/WD16/d Write program counter (PC)
WRITE_HX Active BDM 4C/WD16/d Write H and X register pair (H:X)
WRITE_SP Active BDM 4F/WD16/d Write stack pointer (SP)
WRITE_NEXT Active BDM 50/WD/d Increment H:X by one, then write memory byte located at H:X

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