Tektronix Keithley 4200A-SCS - Page 174

Section 6: Using a Model 82 C-V System Model 4200A-SCS Prober and External Instrument Control
6-66 4200A-913-01 Rev. A December 2020
MOS Process Characterization
Zaihinger, K.H. and Heiman, F.P., "The C-V Technique as an Analytical Tool", Solid State Technology,
13:5-6 (1970).
McMillian, L., "MOS C-V Techniques for IC Process Control," Solid State Technology, 15, 47 (1972).
Zerbst, M., Relaxationseffekte an Halbeiter Isolator-Grenzflaechen, Z.Angnew, Phys. 22, 30 (1966).
Mobile Ion Charge Monitoring
Stauffer, L., et al., "Mobile Ion Monitoring by Simultaneous Triangular Voltage Sweep," Solid State
Technology, 38, S3 (1995).