Tektronix Keithley 4200A-SCS - References; Bibliography of C-V Measurements; Articles and Papers

Section 6: Using a Model 82 C-V System Model 4200A-SCS Prober and External Instrument Control
6-64 4200A-913-01 Rev. A December 2020
References
The references below are cited in this chapter:
Nicollian, E.H. and Brews, J.R., MOS Physics and Technology. Wiley, New York (2003).
Sze, S.M., Physics of Semiconductor Devices 2nd edition. Wiley, New York (1985).
Snow, E.H. Grove, A.S., Deal, B.E., and Sah, C.T.J., Ionic Transport Phenomena in Insulating Films,
Appl. Phys., 36, 1664 (1965).
Bibliography of C-V Measurements
Texts
Grove, A.S., Physics and Technology of Semiconductor Devices, Wiley, New York (1967).
Sze, S.M., Semiconductor Devices, Physics and Technology, Wiley, New York (1985).
Articles and Papers
Feedback Charge Method
Mego, T.J., Improved Feedback Charge Method for Quasistatic CV Measurements in Semiconductors,
Rev. Sci. Instr. 57, 11 (1986).
Mego, T.J., "Improved Quasistatic CV Measurement Method for MOS," Solid State Technology, 29,
11, 519-21 (1986).
Markgraf, W., Baumann, M., Beyer, A., Arst, P., Rennau, M., Nutzung der statischen CU-Methode im
Ranen eines mikrorechnergesteuerten MOS-Messplatzes, Phys. d.
Halbleiteroberflaeche, 15, 73 (1984).
Q-V Static Method
Ziegler, K. and Klausmann, E., "Static Technique for Precise Measurements of Surface Potential and
Interface State Density in MOS Structures," Appl. Phys. Lett. 26, 400 (1975).
Kirov, K., Alexsandrova, S., and Minchev, C., "Error in Surface State Determination Caused by
Numerical Differentiation of Q-V Data," Solid State Electronics, 18, 341 (1978).