451
Table 17.2 Selecting PROM Programming Mode
Pin
Mode CE OE PGM V
PP
V
CC
I/O7–I/O0 A16–A0
Write 0 1 0 V
PP
V
CC
Data input Address input
Verify 0 0 1 Data output
Program inhibit 0 0 0 High impedance
011
100
111
Legend:
0: Low
1: High
V
PP
: V
PP
level
V
CC
: V
CC
level
17.3.2 Write/Verify and Electrical Characteristics
Write/Verify: Write/verify can be accomplished by an efficient high-speed, high-reliability
programming method. This method can write data quickly and accurately without placing voltage
stress on the device. The basic flowchart for this high-speed, high-reliability programming method
is shown in figure 17.4.