528
Table 20.20 Bus Timing (1) (cont)
Conditions: V
CC
= 3.3 V ±0.3V, AV
CC
= 3.3 V ±0.3V, AV
CC
= V
CC
±0.3V, AV
ref
= 3.0 V to
AV
CC
, V
SS
= AV
SS
= 0 V, φ = 20 MHz
*
1
, Ta = –20 to +75°C
*
2
Notes: *1 ROMless products
*2 Regular-specification products; for wide-temperature-range products, Ta = –40 to
+85°C
Item Symbol Min Max Unit Figures
Write data delay time 1 t
WDD1
— 35 ns 20.53, 20.57, 20.58,
20.63
Write data delay time 2 t
WDD2
— 20 ns 20.55, 20.56
Write data hold time t
WDH
0 — ns 20.53, 20.55–20.58
Parity output delay time 1 t
WPDD1
— 40 ns 20.53, 20.57, 20.58
Parity output delay time 2 t
WPDD2
— 20 ns 20.55, 20.56
Parity output hold time t
WPDH
0 — ns 20.53, 20.55–20.58
Wait setup time t
WTS
10 — ns 20.54, 20.59, 20.63
Wait hold time t
WTH
6—ns
Read data access time 1
*
6
t
ACC1
t
cyc
– 30
*
4
— ns 20.52, 20.55, 20.56
Read data access time 2
*
6
t
ACC2
t
cyc
× (n+2) –
30
*
3
— ns 20.53, 20.54, 20.57–20.59
RAS delay time 1 t
RASD1
— 20 ns 20.55–20.58,
RAS delay time 2 t
RASD2
—30ns
20.60–20.62
CAS delay time 1 t
CASD1
— 20 ns 20.55
CAS delay time 2
*
7
t
CASD2
— 20 ns 20.57, 20.58,
CAS delay time 3
*
7
t
CASD3
—20ns
20.60–20.62
Column address setup time t
ASC
0 — ns 20.55, 20.56
Read data access
time from CAS 1
*
6
35% duty
*
2
t
CAC1
t
cyc
× 0.65 –
19
—ns
50% duty t
cyc
× 0.5 – 19— ns
Read data access time from
CAS 2
*
6
t
CAC2
t
cyc
× (n+1) –
25
*
3
— ns 20.57–20.59
Read data access time from
RAS 1
*
6
t
RAC1
t
cyc
× 1.5 – 20— ns 20.55, 20.56
Read data access time from
RAS 2
*
6
t
RAC2
t
cyc
× (n+2.5)
– 20
*
3
— ns 20.57–20.59
High-speed page mode CAS
precharge time
t
CP
t
cyc
× 0.25 — ns 20.56