Freescale Semiconductor FlexRay MFR4310 - ESD Protection and Latch-Up Immunity; Table A-2. ESD and Latch-Up Test Conditions; Table A-3. ESD and Latch-Up Protection Characteristics

Electrical Characteristics
MFR4310 Reference Manual, Rev. 2
240 Freescale Semiconductor
A.1.6 ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device is a failure if after exposure to ESD pulses the device no longer meets the device specification.
Complete DC parametric and functional testing is performed per the applicable device specification at
room temperature followed by hot temperature, unless specified otherwise in the device specification.
Table A-2. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body Series Resistance R1 1500 Ω
Storage Capacitance C 100 pF
Number of Pulse per pin
positive
negative
--
3
3
Machine Series Resistance R1 0 Ω
Storage Capacitance C 200 pF
Number of Pulse per pin
positive
negative
--
3
3
Latch-up Minimum input voltage limit - -2.5 V
Maximum input voltage limit - 7.5 V
Table A-3. ESD and Latch-up Protection Characteristics
Num C Rating Symbol Min Max Unit
1 T Human Body Model (HBM) V
HBM
2000 - V
2 T Machine Model (MM) V
MM
200 - V
3 T Charge Device Model (CDM) V
CDM
500 - V
4 T Latch-up Current at T
A
= 125°C
positive
negative
I
LAT
+100
-100
-
mA
5 T Latch-up Current at T
A
= 27°C
positive
negative
I
LAT
+200
-200
-mA