Flexible static memory controller (FSMC) RM0090
1536/1731 DocID018909 Rev 11
36.5.1 External memory interface signals
Table 216, Table 217 and Table 218 list the signals that are typically used to interface NOR
Flash, SRAM and PSRAM.
Note: Prefix “N”. specifies the associated signal as active low.
NOR Flash, nonmultiplexed I/Os
NOR Flash memories are addressed in 16-bit words. The maximum capacity is 512 Mbit (26
address lines).
Table 215. Programmable NOR/PSRAM access parameters
Parameter Function Access mode Unit Min. Max.
Address
setup
Duration of the address
setup phase
Asynchronous
AHB clock cycle
(HCLK)
015
Address hold
Duration of the address hold
phase
Asynchronous,
muxed I/Os
AHB clock cycle
(HCLK)
115
Data setup
Duration of the data setup
phase
Asynchronous
AHB clock cycle
(HCLK)
1256
Bust turn
Duration of the bus
turnaround phase
Asynchronous and
synchronous
read/write
AHB clock cycle
(HCLK)
015
Clock divide
ratio
Number of AHB clock cycles
(HCLK) to build one memory
clock cycle (CLK)
Synchronous
AHB clock cycle
(HCLK)
2 16
Data latency
Number of clock cycles to
issue to the memory before
the first data of the burst
Synchronous
Memory clock
cycle (CLK)
2 17
Table 216. Nonmultiplexed I/O NOR Flash
FSMC signal name I/O Function
CLK O Clock (for synchronous access)
A[25:0] O Address bus
D[15:0] I/O Bidirectional data bus
NE[x] O Chip select, x = 1..4
NOE O Output enable
NWE O Write enable
NL(=NADV) O
Latch enable (this signal is called address
valid, NADV, by some NOR Flash devices)
NWAIT I NOR Flash wait input signal to the FSMC