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INTERNAL MEMORY
32180 Group User’s Manual (Rev.1.0)
6.5 Programming the Internal Flash Memory
START
Write the Read Status command
(H'7070) to any address of the
internal flash memory
Read any address of the
internal flash memory
END
Figure 6.5.12 Read Status Command
(7) Clear Status Register command
The Clear Status Register command clears the Flash Status Register 2 ERASE (erase status), WRERR1
(write status 1) and WRERR2 (write status 2) bits to "0". Write the Clear Status Register command (H’5050)
to any address of the internal flash memory, and Flash Status Register 2 is thereby initialized.
If an error occurs when programming or erasing the internal flash memory and the Flash Status Register 2
ERASE (erase status), WRERR1 (write status 1) or WRERR2 (write status 2) bit is set to "1", the next
programming or erase operation cannot be executed unless each status bit is cleared to "0".
START
Write the Clear Status Register command (H'5050)
to any address of the internal flash memory
END
Figure 6.5.13 Clear Status Register Command
(6) Read Status command
The Read Status command reads the content of Flash Status Register 2 (FSTAT2) that indicates whether
flash memory programming or erase operation has terminated normally. To read Flash Status Register 2,
write the Read Status command (H’7070) to any address of the internal flash memory. Next, read any ad-
dress of the internal flash memory, and Flash Status Register 2 (FSTAT2) will be read out.
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