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AIXTRON CRIUS II - Susceptor

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crius_II_en_00, Edition 06/2010
64 CONFIDENTIAL AIXTRON - Dokumentation
Description System Manual
Reactor CRIUS II
3
3.5.2 Susceptor
The susceptor is a graphite disk, coated with approximately 100 µm of SiC,
which holds the process wafers. It is located on top of the susceptor support.
The susceptor support rotates in a clockwise direction to ensure homoge-
neous temperatures during the process.
The susceptor is rotated by a motor drive. A rotation speed of 50200 rpm is
normally used (maximum speed: 500 rpm).
Different susceptor variants are available to cater for different numbers, types,
and thicknesses of wafers.
Fig. 3-10 Reactor
A Susceptor (example: 55 x 2" wafers)
B Reactor chamber

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