Flexible static memory controller (FSMC) RM0440
558/2126 RM0440 Rev 4
19.7.1 External memory interface signals
The following tables list the signals that are typically used to interface NAND Flash memory.
Note: The prefix “N” identifies the signals which are active low.
8-bit NAND Flash memory
Theoretically, there is no capacity limitation as the FMC can manage as many address
cycles as needed.
Memory hold
Number of clock cycles (HCLK)
during which the address must be
held (as well as the data if a write
access is performed) after the
command de-assertion
Read/Write
AHB clock cycle
(HCLK)
1 254
Memory
databus high-Z
Number of clock cycles (HCLK)
during which the data bus is kept
in high-Z state after a write
access has started
Write
AHB clock cycle
(HCLK)
1 255
Table 149. Programmable NAND Flash access parameters (continued)
Parameter Function Access mode Unit Min. Max.
Table 150. 8-bit NAND Flash
FMC signal name I/O Function
A[17] O NAND Flash address latch enable (ALE) signal
A[16] O NAND Flash command latch enable (CLE) signal
D[7:0] I/O 8-bit multiplexed, bidirectional address/data bus
NCE O Chip select
NOE(= NRE) O Output enable (memory signal name: read enable, NRE)
NWE O Write enable
NWAIT/INT I NAND Flash ready/busy input signal to the FMC
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