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Renesas RL78/G10 User Manual

Renesas RL78/G10
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RL78/G10 CHAPTER 20 FLASH MEMORY
R01UH0384EJ0311 Rev. 3.11 549
Dec 22, 2016
CHAPTER 20 FLASH MEMORY
The RL78 microcontroller incorporates the flash memory to which a program can be written, erased, and overwritten.
Caution The operating voltage during flash memory programming must be in the range from 4.5 V to 5.5 V.
FFFFFH
Special function register (SFR)
256 bytes
General-purpose register
8 bytes
Reserved
Reserved
Reserved
Reserved
Code flash memory
1 to 4 KB
Special function register (2nd SFR)
2 KB
Mirror
RAM
128 to 512 bytes
FFEF8H
FFEF7H
FFF00H
FFEFFH
FFEE0H
FFEDFH
F0800H
F07FFH
F8000H
F7FFFH
F0000H
EFFFFH
00000H
The methods for programming the flash memory are as follows.
The contents of the code flash memory can be rewritten by serial programming using a flash memory programmer or
an external device (UART communication).
• Serial programming by using a flash memory programmer (see 20.1)
Data can be written to the flash memory on-board or off-board, by using a dedicated flash memory programmer.
• Serial programming by using an external device (UART communication) (see 20.2)
Data can be written to the flash memory on-board, by using UART communication with an external device (a
microcontroller or ASIC).

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Renesas RL78/G10 Specifications

General IconGeneral
BrandRenesas
ModelRL78/G10
CategoryMotherboard
LanguageEnglish

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