RL78/G10 CHAPTER 24 ELECTRICAL SPECIFICATIONS
R01UH0384EJ0311 Rev. 3.11 604
Dec 22, 2016
24.8 Flash Memory Programming Characteristics
(T
A = 0 to + 40°C, 4.5 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Code flash memory
rewritable times
Notes 1, 2, 3
C
erwr Retained for 20 years. TA = +85°C 1000 Times
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer.
3. These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.
24.9 Dedicated Flash Memory Programmer Communication (UART)
(TA = 0 to + 40°C, 4.5 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate 115,200 bps
Remark The transfer rate during flash memory programming is fixed to 115,200 bps.