NXP Semiconductors MC9S12G User Manual

MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1125
Chapter 31
240 KByte Flash Module (S12FTMRG240K2V1)
31.1 Introduction
The FTMRG240K2 module implements the following:
• 240Kbytes of P-Flash (Program Flash) memory
• 4Kbytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
Table 31-1. Revision History
Revision
Number
Revision
Date
Sections
Affected
Description of Changes
V01.06 23 Jun 2010 31.4.6.2/31-115
9
31.4.6.12/31-11
66
31.4.6.13/31-11
67
Updated description of the commands RD1BLK, MLOADU and MLOADF
V01.07 20 aug 2010 31.4.6.2/31-115
9
31.4.6.12/31-11
66
31.4.6.13/31-11
67
Updated description of the commands RD1BLK, MLOADU and MLOADF
Rev.1.27 31 Jan 2011 31.3.2.9/31-114
2
Updated description of protection on Section 31.3.2.9

NXP Semiconductors MC9S12G Specifications

General

Brand	NXP Semiconductors
Model	MC9S12G
Category	Microcontrollers
Language	English