NXP Semiconductors MC9S12G User Manual

240 KByte Flash Module (S12FTMRG240K2V1)
MC9S12G Family Reference Manual Rev.1.27
NXP Semiconductors 1127
• Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and phrase program operation
• Ability to read the P-Flash memory while programming a word in the EEPROM memory
• Flexible protection scheme to prevent accidental program or erase of P-Flash memory
31.1.2.2 EEPROM Features
• 4 Kbytes of EEPROM memory composed of one 4 Kbyte Flash block divided into 1024 sectors of
4 bytes
• Single bit fault correction and double bit fault detection within a word during read operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and word program operation
• Protection scheme to prevent accidental program or erase of EEPROM memory
• Ability to program up to four words in a burst sequence
31.1.2.3 Other Flash Module Features
• No external high-voltage power supply required for Flash memory program and erase operations
• Interrupt generation on Flash command completion and Flash error detection
• Security mechanism to prevent unauthorized access to the Flash memory
31.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 31-1.

NXP Semiconductors MC9S12G Specifications

General

Brand	NXP Semiconductors
Model	MC9S12G
Category	Microcontrollers
Language	English